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HFW5N65S
N-Channel MOSFET
Description
HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operatin...
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