HFS5N65S

HFS5N65S Oct 2009 HFS5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 4.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2.3 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 4.2* 2.4* 16.8* ρ30 180 4.2 10 4.5 PD Power Dissipation (TC = 25ଇ) - Derate above 25ଇ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 33 0.26 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ. --- Max. 3.79 62.5 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥ͑ͣͪ͡͡ HFS5N65S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions M...