HFP10N65S

HFP10N65S March 2014 HFP10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 29 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ7\S #9GS=10V ƒ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 9.5 5.7 38 ρ30 700 9.2 15.6 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 156 1.25 -55 to +150 300 Units 9 $ $ $ 9 P- $ P- 9QV : :ഒ ഒ ഒ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.8 -62.5 Units ഒ: క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡ HFP10N65S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Char...