HFB1N70S

HFB1N70S Dec 2012 HFB1N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ଇ) – Continuous (TC = 100ଇ) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 0.3 0.18 1.2 ρ30 20 0.3 0.3 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25ଇ) Power Dissipation (TL = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 0.9 2.5 0.02 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJL RșJA Parameter Junction-to-Lead Junction-to-Ambient Typ. --- Max. 50 140 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͣ͑͢͡ HFB1N70S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics...