DatasheetsPDF.com
HFH7N80
N-Channel MOSFET
Description
HFH7N80 Mar 2010 HFH7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
SemiHow
Download HFH7N80 Datasheet
Similar Datasheet
HFH7N60
N-Channel Enhancement Mode Field Effect Transistor
- HUASHAN ELECTRONIC
HFH7N80
N-Channel MOSFET
- SemiHow
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)