NCE08N50K

NCE08N50I,NCE08N50K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 560 600 7.8 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE08N50I TO-251 NCE08N50I NCE08N50K TO-252 NCE08N50K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 7.8 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-251 Value 500 ±30 7.8 5 23.4 50 83 0.67 230 7.8 TO-252 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.2 NCE08N50I...