N-Channel Super Junction Power MOSFET
NCE11N60D,NCE11N60,NCE11N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advan...
Description
NCE11N60D,NCE11N60,NCE11N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON) ID
650 380 11
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11N60D
TO-263
NCE11N60D
NCE11N60
TO-220
NCE11N60
NCE11N60F
TO-220F
NCE11N60F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
TO-263
TO-220
TO-220F
Symbol
VDS VGS ID (DC) ID (DC) IDM (pluse)
NCE11N60D NCE11N60
NCE11N60F
600
±30
11 11*
7 7*
33 33*
Unit
V V A A A...
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