NCE11N60

NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 650 380 11 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE11N60D TO-263 NCE11N60D NCE11N60 TO-220 NCE11N60 NCE11N60F TO-220F NCE11N60F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) TO-263 TO-220 TO-220F Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) NCE11N60D NCE11N60 NCE11N60F 600 ±30 11 11* 7 7* 33 33* Unit V V A A A...