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NCE05N65I Dataheets PDF



Part Number NCE05N65I
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Datasheet NCE05N65I DatasheetNCE05N65I Datasheet (PDF)

NCE05N65I,NCE05N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requir.

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NCE05N65I,NCE05N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON) ID 650 900 5 V mΩ A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE05N65I TO-251 NCE05N65I NCE05N65K TO-252 NCE05N65K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-251 TO-252 Value 650 ±30 5 3 15 50 50 0.4 130 5 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.2 NCE05N65I,NCE05N65K Parameter Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Parameter Thermal Resistance,Junction-to-Case(Maximum) Thermal Resistance,Junction-to-Ambient (Maximum) Symbol EAR TJ,TSTG Symbol RthJC RthJA Value 0.4 -55...+150 Value 2.5 75 Unit mJ °C Unit °C /W °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A Dynamic Characteristics Forward Transconductance gFS VDS = 20V, ID = 3A Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=50V,VGS=0V, F=1.0MHz Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS=480V,ID=5A, VGS=10V Intrinsic gate resistance RG f = 1 MHz open drain Switching times Turn-on Delay Time td(on) Turn-on Rise Time Turn-Off Delay Time tr td(off) VDD=380V,ID=5A, RG=18Ω,VGS=10V Turn-Off Fall Time tf Source- Drain Diode Characteristics Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) ISD ISDM TC=25°C Forward On Voltage VSD Tj=25°C,ISD=5A,VGS=0V Reverse Recovery Time trr Reverse Recovery Charge Qrr Tj=25°C,IF=5A,di/dt=100A/μs Peak reverse recovery current Irrm Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Min Typ 650 2.5 3 850 5 520 52 4.5 12 2.2 4.5 2.6 6 2.5 55 9 1 200 1.6 15 Max 1 50 ±100 3.5 900 25 80 14 5 15 1.3 Unit V μA μA nA V mΩ S PF PF PF nC nC nC Ω nS nS nS nS A A V nS uC A Wuxi NCE Power Semiconductor Co., Ltd Page 2 http://www.ncepower.com v1.2 NCE05N65I,NCE05N65K TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature Wuxi NCE Power Semiconductor Co., Ltd Page 3 http://www.ncepower.com v1.2 Figure7. BVDSS vs Junction Temperature NCE05N65I,NCE05N65K Figure8. Maximum ID vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 4 http://www.ncepower.com v1.2 Test circuit  1)Gate charge test circuit & Waveform NCE05N65I,NCE05N65K 2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 5 http://www.ncepower.com v1.2 TO-251 Package Information NCE05N65I,NCE05N65K Symbol A A1 B b b1 c c1 D D1 E e e1 L Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP 4.500 4.700 7.500 7.900 Wuxi NCE Power Semiconductor Co., Ltd Page 6 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP 0.177 0.185 0.295 0.311 http://www.ncepower.com v1.2 NCE05N65I,NCE05N65K TO-252 Packag.


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