Document
NCE05N65I,NCE05N65K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS RDS(ON) ID
650 900
5
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N65I
TO-251
NCE05N65I
NCE05N65K
TO-252
NCE05N65K
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR
TO-251
TO-252
Value
650 ±30
5 3 15
50
50 0.4 130 5
Unit
V V A A A
V/ns
W W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.2
NCE05N65I,NCE05N65K
Parameter Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic Parameter
Thermal Resistance,Junction-to-Case(Maximum) Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol EAR
TJ,TSTG
Symbol
RthJC RthJA
Value
0.4 -55...+150
Value
2.5 75
Unit mJ
°C
Unit
°C /W °C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=650V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=650V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 3A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss Crss
VDS=50V,VGS=0V, F=1.0MHz
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs Qgd
VDS=480V,ID=5A, VGS=10V
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time Turn-Off Delay Time
tr td(off)
VDD=380V,ID=5A, RG=18Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode)
ISD ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ
650
2.5 3 850
5 520 52 4.5 12 2.2 4.5 2.6
6 2.5 55 9
1 200 1.6 15
Max
1 50 ±100 3.5 900
25
80 14 5 15 1.3
Unit
V μA μA nA V mΩ
S PF PF PF nC nC nC Ω
nS nS nS nS
A A V nS uC A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.2
NCE05N65I,NCE05N65K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.2
Figure7. BVDSS vs Junction Temperature
NCE05N65I,NCE05N65K
Figure8. Maximum ID vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
http://www.ncepower.com
v1.2
Test circuit
1)Gate charge test circuit & Waveform
NCE05N65I,NCE05N65K
2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
http://www.ncepower.com
v1.2
TO-251 Package Information
NCE05N65I,NCE05N65K
Symbol
A A1 B b b1 c c1 D D1 E e e1 L
Dimensions In Millimeters
Min.
Max.
2.200
2.400
1.050
1.350
1.350
1.650
0.500
0.700
0.700
0.900
0.430
0.580
0.430
0.580
6.350
6.650
5.200
5.400
5.400
5.700
2.300 TYP
4.500
4.700
7.500
7.900
Wuxi NCE Power Semiconductor Co., Ltd
Page 6
Dimensions In Inches
Min.
Max.
0.087
0.094
0.042
0.054
0.053
0.065
0.020
0.028
0.028
0.035
0.017
0.023
0.017
0.023
0.250
0.262
0.205
0.213
0.213
0.224
0.091 TYP
0.177
0.185
0.295
0.311
http://www.ncepower.com
v1.2
NCE05N65I,NCE05N65K TO-252 Packag.