NCE11NF50T

NCE11NF50T NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 560 410 11 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） ● Strongly recommended for bridge topologies Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE11NF50T TO-247 NCE11NF50T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 11 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-247 NCE11NF50T 500 ±30 11 7 33 50 125 1 340 11 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.nce...