Document
NCE20NF50T
NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode)
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON)
ID
560 210 20
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
● Strongly recommended for bridge topologies
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20NF50T
TO-247
NCE20NF50T
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj = 125 °C
Maximum Power Dissipation(Tc=25℃) Derate above 25°C
Single pulse avalanche energy (Note 2) Avalanche current(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR EAR
TO-247
NCE20NF50T
500 ±30 20 12.5 60
50
208 1.67 690 20
1
Unit
V V A A A
V/ns
W W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20NF50T
Parameter
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Symbol TJ,TSTG
NCE20NF50T
-55...+150
Unit
°C
Table 2. Thermal Characteristic Parameter
Thermal Resistance,Junction-to-Case(Maximum) Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
RthJC RthJA
NCE20NF50T
0.6 62
Unit
°C /W °C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance
BVDSS IDSS IDSS IGSS VGS(th)
RDS(ON)
VGS=0V ID=250μA VDS=500V,VGS=0V VDS=500V,VGS=0V VGS=±30V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=10A
Dynamic Characteristics
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Intrinsic gate resistance
gFS VDS = 20V, ID = 10A
Clss Coss Crss
VDS=50V,VGS=0V, F=1.0MHz
Qg Qgs
VDS=400V,ID=20A, VGS=10V
Qgd
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
td(on) tr
td(off) tf
VDD=380V,ID=20A, RG=3.6Ω,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode)
ISD ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=20A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=20A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min
500
3
Typ
180
17.5 2400 180 5.7
59 10 26 0.9
10 5 50 5
0.9 190 1.5 13
Max
1 100 ±100
5 210
100 12 20 60 1.3
Unit
V μA μA nA V mΩ
S pF pF pF nC nC nC Ω
nS nS nS nS
A A V nS uC A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20NF50T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20NF50T
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20NF50T
Figure7. BVDSS vs Junction Temperature
Figure8. Maximum ID vs Junction Temperature
Figure 9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1) Gate charge test circuit & Waveform
NCE20NF50T
2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
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TO-247 Package Information
NCE20NF50T
Symbol
A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H
Dimensions In Millimeters
Min. 4.850
Max. 5.150
2.200
2.600
1.000
1.400
2.800
3.200
1.800
2.200
0.500
0.700
1.900
2.100
15.450
15.750
3.500 REF
3.600 REF
40.900
41.300
24.800
25.100
20.300
20.600
7.100
7.300
5.450 TYP
5.980 REF
Dimensions In Inches
Min. 0.191
Max. 0.200
0.087
0.102
0.039
0.055
0.110
0.126
0.071
0.087
0.020
0.028
0.075
0.083
0.608
0.620
0.138 REF
0.142 REF
1.610
1.626
0.976
0.988
0.799
0.811
0.280
.