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NCE20NF50T Dataheets PDF



Part Number NCE20NF50T
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Datasheet NCE20NF50T DatasheetNCE20NF50T Datasheet (PDF)

NCE20NF50T NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme l.

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NCE20NF50T NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 560 210 20 V mΩ A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) ● Strongly recommended for bridge topologies Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20NF50T TO-247 NCE20NF50T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR EAR TO-247 NCE20NF50T 500 ±30 20 12.5 60 50 208 1.67 690 20 1 Unit V V A A A V/ns W W/°C mJ A mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.0 NCE20NF50T Parameter Operating Junction and Storage Temperature Range * limited by maximum junction temperature Symbol TJ,TSTG NCE20NF50T -55...+150 Unit °C Table 2. Thermal Characteristic Parameter Thermal Resistance,Junction-to-Case(Maximum) Thermal Resistance,Junction-to-Ambient (Maximum) Symbol RthJC RthJA NCE20NF50T 0.6 62 Unit °C /W °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition On/off states Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance BVDSS IDSS IDSS IGSS VGS(th) RDS(ON) VGS=0V ID=250μA VDS=500V,VGS=0V VDS=500V,VGS=0V VGS=±30V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=10A Dynamic Characteristics Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Intrinsic gate resistance gFS VDS = 20V, ID = 10A Clss Coss Crss VDS=50V,VGS=0V, F=1.0MHz Qg Qgs VDS=400V,ID=20A, VGS=10V Qgd RG f = 1 MHz open drain Switching times Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) tr td(off) tf VDD=380V,ID=20A, RG=3.6Ω,VGS=10V Source- Drain Diode Characteristics Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) ISD ISDM TC=25°C Forward on voltage VSD Tj=25°C,ISD=20A,VGS=0V Reverse Recovery Time trr Reverse Recovery Charge Qrr Tj=25°C,IF=20A,di/dt=100A/μs Peak reverse recovery current Irrm Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Min 500 3 Typ 180 17.5 2400 180 5.7 59 10 26 0.9 10 5 50 5 0.9 190 1.5 13 Max 1 100 ±100 5 210 100 12 20 60 1.3 Unit V μA μA nA V mΩ S pF pF pF nC nC nC Ω nS nS nS nS A A V nS uC A Wuxi NCE Power Semiconductor Co., Ltd Page 2 http://www.ncepower.com v1.0 NCE20NF50T TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for NCE20NF50T Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. RDS(ON) vs Junction Temperature Wuxi NCE Power Semiconductor Co., Ltd Page 3 http://www.ncepower.com v1.0 NCE20NF50T Figure7. BVDSS vs Junction Temperature Figure8. Maximum ID vs Junction Temperature Figure 9. Gate charge waveforms Figure10. Capacitance Figure11. Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 4 http://www.ncepower.com v1.0 Test circuit  1) Gate charge test circuit & Waveform NCE20NF50T 2)Switch Time Test Circuit: 3)Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 5 http://www.ncepower.com v1.0 TO-247 Package Information NCE20NF50T Symbol A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H Dimensions In Millimeters Min. 4.850 Max. 5.150 2.200 2.600 1.000 1.400 2.800 3.200 1.800 2.200 0.500 0.700 1.900 2.100 15.450 15.750 3.500 REF 3.600 REF 40.900 41.300 24.800 25.100 20.300 20.600 7.100 7.300 5.450 TYP 5.980 REF Dimensions In Inches Min. 0.191 Max. 0.200 0.087 0.102 0.039 0.055 0.110 0.126 0.071 0.087 0.020 0.028 0.075 0.083 0.608 0.620 0.138 REF 0.142 REF 1.610 1.626 0.976 0.988 0.799 0.811 0.280 .


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