NCE20NF65T

NCE20NF65T NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode) General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Intrinsic fast-recovery body diode ●Extreme low reverse recovery charge ●100% Avalanche Tested VDS RDS(ON) ID 650 210 20 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） ● strongly recommended for bridge topologies Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20NF65T TO-247 NCE20NF65T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Operating Junction and Storage Temperature Range * limited by maximum junction temperature Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR EAR TJ,TSTG TO-24...