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NCE15GD120T

NCE Power Semiconductor

Trench NPT IGBT

http://www.ncepower.com NCE15GD120T 1200V, 15A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High sp...


NCE Power Semiconductor

NCE15GD120T

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http://www.ncepower.com NCE15GD120T 1200V, 15A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft switching applications General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Absolute Maximum Ratings Pb Free Product NCE15GD120T Symbol Description VCES VGES IC ICM(1) IF IFM PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current @TC=25°C Continuous Collector Current @TC=100°C Pulsed Collector Current Diode Continuous Forward Current @TC=100°C Diode Maximum Forward Current Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from TL case for 5seconds Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature Ratings 1200 +/-30 30 15 45 15 90 220 88 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Thermal Characteristics Symbol R JC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Elect...




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