CM4430

CM4430 N-Channel Enhancement-Mode MOSFET(30V,18A) VDSS 30V PRODUCT SUMMARY ID RDS(on) (m-ohm) Max 18A 6 @ VGS = 10V ,ID=18A 10 @ VGS = 4.5V,ID=15A Pb ◆ Features ．1 Advanced Trench Process Technology. ．2 High Density Cell Design for Ultra Low On-Resistance. ．3 Lead free product is acquired. ．4 Surface mount Package ．5 RoHS Compliant. Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain ◆ Ordering Information Ordering Number Lead Free Halogen Free CM4430-PR-L CM4430-PR-G Package SOP-8 CM4430-PR-L (1)Package Type (2)Packing Type (3)Lead Free Pin Assignment 4 1/2/3 5/6/7/8 G SD Packing Tape Reel (1) P：SOP-8 (2) R：Tape Reel (3) G：Halogen Free；L：Lead Free Rev.01 Page 1 of 6 www.cybermaxtech.com ◆ Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM PD Tj, Tstg RθJA Gate-Source Voltage Drain Current (Continuous) a Drain Current (Pulsed) b Total Power Dissipation @TA=25oC Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) c a:Fused current that based on wire numbers and diameter b:Repetitive Rating: Pulse width limited by the maximum junction temperature c:1-in2 2oz Cu PCB board ◆ Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body Leakage Current VGS=...