IXTH75N15

High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 75 A 300 A 75 A 60 mJ 1.5 J 5 V/ns 330 -55 ... +150 150 -55 ... +150 W °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g 4g TO-247 AD (IXTH) TO-268 (IXTT) (TAB) G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Characteristic Values Min. Typ. Max. 150 V 2.0 4.0 V ±100 nA 25 µA 250 µA 23 mΩ Advantages z Easy to mount z Space savings z High power density © 2004 IXYS All rights reserved DS98948C(05/04) Symbol gfs Ciss Coss Crss td(on)...