Document
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 75N15 IXTT 75N15
VDSS ID25
RDS(on)
= 150 V = 75 A = 23 mΩ
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
Maximum Ratings
150 V 150 V ±20 V ±30 V
75 A
300 A 75 A 60 mJ 1.5 J
5 V/ns
330
-55 ... +150 150
-55 ... +150
W
°C °C °C
300 °C
1.13/10 Nm/lb.in.
6g 4g
TO-247 AD (IXTH)
TO-268 (IXTT)
(TAB)
G
G = Gate S = Source
S
D = Drain TAB = Drain
(TAB)
Features
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
25 µA 250 µA
23 mΩ
Advantages
z Easy to mount z Space savings z High power density
© 2004 IXYS All rights reserved
DS98948C(05/04)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified) Min. Typ. Max.
VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
34 45
S
5400 1100
420
pF pF pF
24 ns 33 ns 70 ns 17 ns
210 nC 45 nC 90 nC
0.35 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified) min. typ. max.
IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
75 A 300 A 1.5 V
Trr IF = 25A -di/dt = 100 A/µs
QRM VR = 100V
150 ns 2.0 µC
IXTH 75N15 IXTT 75N15
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Min. Max.
A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26
e 5.20 5.72 L 19.81 20.32 L1 4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .819 .610
.031 .845 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
TO-268 Outline
Min Recommended Footprint
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
one or moreof the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
5,381,025 6,162,665 6,306,728 B1 6,534,343 5,486,715 6,259,123 B1 6,404,065B1 6,583,505
6,683,344 6,710,405B2
I D - Amperes
I D - Amperes
Fig. 1. Output Characteristics
@ 25 Deg. C
80 VGS = 10V
70 8V 7V
60
50
40 6V
30
20
10
0 0
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VD S - Volts
2
Fig. 3. Output Characteristics @ 125 Deg. C
80 VGS = 10V
70 9V 8V
60 7V
50 40 6V
30
20 5V
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VD S - Volts
Fig. 5. RDS(on) Norm alized to ID25 Value vs . ID
2
VGS = 10V 1.8
TJ = 125ºC
1.6
1.4
1.2 TJ = 25ºC
1
0.8 0
20 40 60 80 100 120 140 160 180 200
I D - Amperes
R D S (on) - Normalized
© 2004 IXYS All rights reserved
I D - Amperes
R D S (on) - Normalized
I D - Amperes
IXTH 75N15 IXTT 75N15
Fig. 2. Extended Output Characteristics @ 25 deg. C
200 VGS = 10V
180 9V 160 8V
140
120 7V
100
80
60 6V
40
20 5V 0 0 1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature
2.2
2 VGS = 10V
1.8
1.6 ID = 75A
1.4 ID = 37.5A
1.2
1
0.8
0.6 -50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Tem perature
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
IXTH 75N15 IXTT 75N15
I D - Amperes
Fig. 7. Input Adm ittance
180
160
140
120
100
80
60 TJ = 125ºC
40 25ºC -40ºC
20
0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
VG S - Volts
g f s - Siemens
80 70 60 50 40 30 20 10
0 0
Fig. 8. Transconductance
TJ = -40ºC 25ºC
125ºC
30 60 90 120 150 180
I D - Amperes
I S - Amperes
Fig. 9. Source Current vs. Source-To-
Drain Voltage
200
180
160
140
120
100
80
60 40 TJ = 125ºC
20
TJ = 25ºC
0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VS D - Volts
VGS - Volts
10 9 8 7 6 5 4 3 2 1 0 0
Fig. 10. Gate Charge
VDS = 75V ID = 37.5A IG = 10mA
20 40 60 80 100 120 140 160 180
Q G - nanoCoulombs
10000
Fig. 11. Capacitance
f = 1MHz
1000
Fig. 12. Forw ard-Bias Safe Operating Area
I.