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IXTT75N15 Dataheets PDF



Part Number IXTT75N15
Manufacturers IXYS
Logo IXYS
Description High Current Power MOSFET
Datasheet IXTT75N15 DatasheetIXTT75N15 Datasheet (PDF)

High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 A.

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High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 75 A 300 A 75 A 60 mJ 1.5 J 5 V/ns 330 -55 ... +150 150 -55 ... +150 W °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g 4g TO-247 AD (IXTH) TO-268 (IXTT) (TAB) G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Characteristic Values Min. Typ. Max. 150 V 2.0 4.0 V ±100 nA 25 µA 250 µA 23 mΩ Advantages z Easy to mount z Space savings z High power density © 2004 IXYS All rights reserved DS98948C(05/04) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External) VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 (TO-247) 34 45 S 5400 1100 420 pF pF pF 24 ns 33 ns 70 ns 17 ns 210 nC 45 nC 90 nC 0.35 K/W 0.21 K/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 75 A 300 A 1.5 V Trr IF = 25A -di/dt = 100 A/µs QRM VR = 100V 150 ns 2.0 µC IXTH 75N15 IXTT 75N15 TO-247 AD Outline 123 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .819 .610 .031 .845 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Min Recommended Footprint Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,162,665 6,306,728 B1 6,534,343 5,486,715 6,259,123 B1 6,404,065B1 6,583,505 6,683,344 6,710,405B2 I D - Amperes I D - Amperes Fig. 1. Output Characteristics @ 25 Deg. C 80 VGS = 10V 70 8V 7V 60 50 40 6V 30 20 10 0 0 5V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VD S - Volts 2 Fig. 3. Output Characteristics @ 125 Deg. C 80 VGS = 10V 70 9V 8V 60 7V 50 40 6V 30 20 5V 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VD S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs . ID 2 VGS = 10V 1.8 TJ = 125ºC 1.6 1.4 1.2 TJ = 25ºC 1 0.8 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes R D S (on) - Normalized © 2004 IXYS All rights reserved I D - Amperes R D S (on) - Normalized I D - Amperes IXTH 75N15 IXTT 75N15 Fig. 2. Extended Output Characteristics @ 25 deg. C 200 VGS = 10V 180 9V 160 8V 140 120 7V 100 80 60 6V 40 20 5V 0 0 1 2 3 4 5 6 7 8 9 10 VD S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature 2.2 2 VGS = 10V 1.8 1.6 ID = 75A 1.4 ID = 37.5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXTH 75N15 IXTT 75N15 I D - Amperes Fig. 7. Input Adm ittance 180 160 140 120 100 80 60 TJ = 125ºC 40 25ºC -40ºC 20 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 VG S - Volts g f s - Siemens 80 70 60 50 40 30 20 10 0 0 Fig. 8. Transconductance TJ = -40ºC 25ºC 125ºC 30 60 90 120 150 180 I D - Amperes I S - Amperes Fig. 9. Source Current vs. Source-To- Drain Voltage 200 180 160 140 120 100 80 60 40 TJ = 125ºC 20 TJ = 25ºC 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VS D - Volts VGS - Volts 10 9 8 7 6 5 4 3 2 1 0 0 Fig. 10. Gate Charge VDS = 75V ID = 37.5A IG = 10mA 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs 10000 Fig. 11. Capacitance f = 1MHz 1000 Fig. 12. Forw ard-Bias Safe Operating Area I.


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