C3011

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol fT ïS21eï2 NF Test Condition VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 6.5 ¾ GHz ¾ 12 ¾ dB ¾ 2.3 ¾ dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collecter-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collecter output capacitance Reverse transfer capacitance Input capacitance ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cre Cib VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 IC = 0.5 mA, IB = 0 VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1 mA VCB = 5 V, IE = 0, f = 1 MHz VEB = 0, IC = 0, f = 1 MHz Note: Cre is measured by 3-terminal method...