2SC3039

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC3039 DESCRIPTION ·With TO-220C package ·High breakdown voltage (VCBO 500V). ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current (DC) ICM Collector current-peak IB Base current PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 500 400 7 7 14 3 1.75 50 150 -50~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=; V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICBO Collector cut-off current VCB=400V ;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.8A ; VCE=5V hFE-2 DC current gain IC=4A ; VCE=5V fT Transition frequency IC=0.8A ; VCE=10V Cob Collector output capacitance f=1MHz ; VCB=10V Switching times ton Turn-on time ts Storage...