TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3122
2SC3122
TV VHF RF Amplifier Applications
Unit: mm
· High gain: Gpe = 24dB (typ.) (f = 200 MHz) · Low noise: NF = 2.0dB (typ.) (f = 200 MHz) · Excellent forward AGC characteristics
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC T.