Ordering number:ENN1049E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1253/2SC3135
High-hFE, AF Amp Applications
Fe...
Ordering number:ENN1049E
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1253/2SC3135
High-hFE, AF Amp Applications
Features
· High VEBO. · Wide ASO and high durability against breakdown.
Package Dimensions
unit:mm 2033A
[2SA1253/2SC3135]
4.0 2.2
1.8 3.0
0.6
0.4 0.5
0.4 0.4
15.0
( ) : 2SA1253
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product
ICBO IEBO hFE
fT
VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA
Common Base Output Capacitance
Cob VCB=(–)6V, f=1MHz
* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
0.7 0.7
123 1.3 1.3
3.0 3.8
1 : Emitter 2 : Collector 3 : Base SANYO : SPA
Ratings (–)60 (–)50 (–)15
(–)200 (–)400
250 150 –55 to +150
Unit V V V mA mA
mW
˚C ˚C
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
100*
560*
100 MHz
(3.8) 2.5
pF
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as li...