A1253

Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA Common Base Output Capacitance Cob VCB=(–)6V, f=1MHz * : The 2SA1253/2SC3135 are classified by 1mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 0.7 0.7 123 1.3 1.3 3.0 3.8 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings (–)60 (–)50 (–)15 (–)200 (–)400 250 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 100* 560* 100 MHz (3.8) 2.5 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as li...