Ordering number:EN1070C
NPN Triple Diffused Planar Silicon Transistor
2SC3151
800V/1.5A Switching Regulator Application...
Ordering number:EN1070C
NPN Triple Diffused Planar Silicon
Transistor
2SC3151
800V/1.5A Switching
Regulator Applications
Features
· High breakdown voltage (VCBO≥900V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2022A
[2SC3151]
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
PW≤300µs, Duty Cycle≤10% Tc=25˚C
Ratings 900 800 7 1.5 5 0.8 60 150
–55 to +150
Unit V V V A A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz
10* 8 15 30
* : The hFE1 of the 2SC3151 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
10 K 20 15 L 30 20 M 40
max 10 10 40*
Unit µA µA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose fail...