Ordering number:EN1252C
NPN Triple Diffused Planar Silicon Transistor
2SC3184
800V/0.5A Switching Regulator Application...
Ordering number:EN1252C
NPN Triple Diffused Planar Silicon
Transistor
2SC3184
800V/0.5A Switching
Regulator Applications
Features
· High breakdown voltage (VCBO≥900V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3184]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
PW≤300µs, Duty Cycle≤10% Tc=25˚C
Ratings 900 800 7 0.5 2 30 150
–55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2 VCE(sat)
fT Cob
VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=60mA VCE=5V, IC=300mA IC=300mA, IB=60mA VCE=10V, IC=60mA VCB=10V, f=1MHz
10* 8
15 20
* : The hFE1 of the 2SC3184 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
max 10 10 40*
2
Unit µA µA
V MHz pF
10 K 20 15 L 30 20 M 40
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sys...
