TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications Dri...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC3325
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
2SC3325
Unit: mm
Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: VCEO = 50 V (min) Complementary to 2SA1313 Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
50
V
50
V
5
V
500
mA
50
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
Start of commercial production
1982-12
1
2014-03-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Sym...