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C3405 Dataheets PDF



Part Number C3405
Manufacturers Toshiba
Logo Toshiba
Description 2SC3405
Datasheet C3405 DatasheetC3405 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base v.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 8 V Collector current DC Pulse IC 0.8 A ICP 1.5 Base current IB 0.2 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 Electrical Characteristics (Ta = 25°C) 2SC3405 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.3 A IC = 0.3 A, IB = 0.06 A IC = 0.3 A, IB = 0.06 A Min Typ. Max Unit ― ― 100 μA ―― 1 mA 900 ― ― V 800 ― ― V 6 ―― 10 ― ― ― ― 0.5 V ― ― 1.2 V Rise time Switching time Storage time tr 20 μs IB1 OUTPUT ― ― 1.0 INPUT IB1 1.3 kΩ tstg IB2 IB2 ― ― 4.0 μs VCC ≈ 400 V Fall time tf IB1 = −IB2 = 0.06 A, DUTY CYCLE ≤ 1% ― ― 1.0 Marking C3405 Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-05 Collector current IC (A) IC – VCE 1.0 100 0.8 0.6 0.4 80 Common emitter Tc = 25°C 60 40 30 20 10 0.2 IB = 5 mA 0 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 14 VCE (sat) – IC 3 Common emitter IC/IB = 5 1 0.5 0.3 Tc = 100°C 0.1 0.05 55 25 0.02 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 Base-emitter saturation voltage VBE (sat) (V) DC current gain hFE 2SC3405 hFE – IC 300 Common emitter VCE = 5 V 100 50 Tc = 100°C 30 25 10 −55 5 2 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 VBE (sat) – IC 10 Common emitter 5 IC/IB = 5 3 Tc = −55°C 1 0.5 0.3 0.2 0.001 25 100 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) IC – VBE 1.2 Common emitter 1.0 VCE = 5 V 0.8 0.6 0.4 Tc = 100°C −55 25 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Switching time (μs) Switching Characteristics 30 Resistance load (R) IC/IB1 = 10 10 2IB1 = −IB2 Pulse width = 20μs 5 DUTY CYCLE ≤ 1% Tc = 100°C 3 25 tstg 1 100 25 tf 0.5 0.3 100 tr 25 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector current IC (A) 3 2010-02-05 Transient thermal resistance rth (°C/W) Collector current IC (A) rth – tw Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 100 (2) 10 (1) 1 0.1 0.001 0.01 0.1 1 10 Pulse width tw (s) 100 1000 2SC3405 Safe Operating Area 3 IC max (pulsed)* 1 IC max (continuous) 10 μs* 100 μs* 0.5 1 ms* 0.3 3 ms* 10 ms* 100 ms* 0.1 0.05 DC operation Tc = 25°C 0.03 *: Single nonrepetitive pulse Tc = 25°C 0.01 Curves must be derated linearly with increase in temperature. 0.005 3 10 30 VCEO max 100 300 1000 Collector-emitter voltage VCE (V) 4 2010-02-05 2SC3405 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even .


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