Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3405
2SC3405
Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications
Industrial Applications Unit: mm
• Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A)
• High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 900 V
Collector-emitter voltage
VCEO 800 V
Emitter-base voltage
VEBO 8 V
Collector current
DC Pulse
IC
0.8 A
ICP 1.5
Base current
IB 0.2 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
JEDEC JEITA
― ―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SC3405
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CBO V (BR) CEO
hFE
VCE (sat) VBE (sat)
VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.3 A IC = 0.3 A, IB = 0.06 A IC = 0.3 A, IB = 0.06 A
Min Typ. Max Unit
― ― 100 μA
――
1 mA
900 ―
―
V
800 ―
―
V
6 ――
10 ― ―
― ― 0.5 V
― ― 1.2 V
Rise time Switching time Storage time
tr 20 μs IB1 OUTPUT ― ― 1.0 INPUT
IB1 1.3 kΩ
tstg
IB2 IB2
― ― 4.0 μs
VCC ≈ 400 V
Fall time
tf IB1 = −IB2 = 0.06 A, DUTY CYCLE ≤ 1%
― ― 1.0
Marking
C3405
Part No. (or abbreviation code) Lot No. Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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Collector current IC (A)
IC – VCE
1.0 100
0.8
0.6
0.4
80
Common emitter Tc = 25°C
60 40 30 20
10 0.2 IB = 5 mA
0 0 0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
14
VCE (sat) – IC
3 Common emitter
IC/IB = 5 1
0.5
0.3 Tc = 100°C
0.1 0.05
55 25
0.02 0.001
0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Base-emitter saturation voltage VBE (sat) (V)
DC current gain hFE
2SC3405
hFE – IC
300 Common emitter VCE = 5 V
100
50 Tc = 100°C 30
25
10 −55
5
2 0.001
0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
VBE (sat) – IC
10 Common emitter
5 IC/IB = 5
3
Tc = −55°C 1
0.5
0.3 0.2 0.001
25 100
0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Collector-emitter saturation voltage VCE (sat) (V)
Collector current IC (A)
IC – VBE
1.2 Common emitter
1.0 VCE = 5 V
0.8
0.6
0.4
Tc = 100°C
−55
25
0.2
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Switching time (μs)
Switching Characteristics
30 Resistance load (R)
IC/IB1 = 10
10
2IB1 = −IB2 Pulse width = 20μs
5 DUTY CYCLE ≤ 1% Tc = 100°C
3
25 tstg
1 100 25 tf
0.5
0.3
100 tr
25
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector current IC (A)
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Transient thermal resistance rth (°C/W)
Collector current IC (A)
rth – tw
Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink
100 (2)
10 (1)
1
0.1 0.001
0.01
0.1 1 10
Pulse width tw (s)
100
1000
2SC3405
Safe Operating Area
3 IC max (pulsed)*
1 IC max (continuous)
10 μs* 100 μs*
0.5 1 ms*
0.3
3 ms* 10 ms*
100 ms*
0.1
0.05
DC operation Tc = 25°C
0.03 *: Single nonrepetitive pulse Tc = 25°C
0.01 Curves must be derated linearly with
increase in temperature.
0.005 3
10 30
VCEO max 100 300 1000
Collector-emitter voltage VCE (V)
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2SC3405
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even .