Document
Ordering number:ENN1425C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1380/2SC3502
Ultrahigh-Definition CRT Display, Video Output Applications
Features
· High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
PC
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)150V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)30V, IC=(–)10mA
* : The 2SA1380/2SC3502 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
12 3
2.4 4.8
1.2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.2 5 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
40* 320*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5
Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage
2SA1380/2SC3502
Symbol
Conditions
Cob VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
Ratings min typ
1.7 (2.6)
1.2 (1.7)
(–)200 (–)200
(–)5
max
(–)0.6 (–)1.