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A1380 Dataheets PDF



Part Number A1380
Manufacturers Sanyo
Logo Sanyo
Description 2SA1380
Datasheet A1380 DatasheetA1380 Datasheet (PDF)

Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications Absol.

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Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)150V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)30V, IC=(–)10mA * : The 2SA1380/2SC3502 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.2 5 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 40* 320* 150 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5 Continued from preceding page. Parameter Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage 2SA1380/2SC3502 Symbol Conditions Cob VCB=(–)30V, f=1MHz Cre VCB=(–)30V, f=1MHz VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 Ratings min typ 1.7 (2.6) 1.2 (1.7) (–)200 (–)200 (–)5 max (–)0.6 (–)1.


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