C3591

Ordering number:EN1609D Features · Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Package Dimensions unit:mm 2010C [2SC3591] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C Conditions Ratings 400 200 6 7 12 4 50 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=250V, IE=0 VEB=5V, IC=0 VCE=1V, IC=1A VCE=1V, IC=5A VCE=10V, IC=0.5A IC=5A, IB=0.5A IC=5A, IB=0.5A Ratings min typ 15 10 10 40 max 100 100 50 0.8 1.5 Unit µA µA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious...