Ordering number:ENN2005A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1416/2SC3646
High-Voltage Switching Applicatio...
Ordering number:ENN2005A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1416/2SC3646
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1416/2SC3646]
4.5 1.6 1.5
1.0 2.5 4.25max
( ) : 2SA1416
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)100V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)100mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)100mA
* : The 2SA1416/2SC3646 are classified by 100mA hFE as follows :
Rank
R
S
T
Marking
hFE 100 to 200 2SA1416 : AB 2SC3646 : CB
140 S 280 200 to 400 hFE rank : R, S, T
Ratings (–)120 (–)100 (–)6 (–)1 (–)2 500 1.3 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Ratings min typ max
Unit
(–)100 nA
(–)100 nA
100*
400*
120 MHz
Continued on next page.
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