Ordering number : EN2005C
2SA1416/2SC3646
Bipolar Transistor
(–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP
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Ordering number : EN2005C
2SA1416/2SC3646
Bipolar
Transistor
(–)100V, (–)1A, Low VCE(sat), (
PNP)
NPN Single PCP
http://onsemi.com
Features
Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
VCBO VCEO VEBO IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions When mounted on ceramic substrate (250mm2×0.8mm)
Ratings (--)120 (--)100 (--)6 (--)1 (--)2 500 1.3 150
--55 to +150
Unit V V V A A
mW W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7007B-004
Top View 4.5 1.6
2SA1416S-TD-E 2SA1416T-TD-E 1.5 2SC3646S-TD-E 2SC3646T-TD-E
Product & Package Information
Package
: PCP
JEITA, JEDEC
: SC-62, SOT-89, TO-243
Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1.0 2.5
4.0
AB
LOT No.
CB
LOT No.
1 0.4
0.5
2
1.5
3.0
3
0.4
TD
Marking
RANK
RANK
0.75
2SA1416
2SC3646
Electrical Connection
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