2SA1419

Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 500 1.5 150 --55 to +150 Unit V V V A A mW W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 1 0.4 0.5 2 1.5 3.0 3 1.0 2.5 4.0 AE LOT No. CE LOT No. 2SA1419S-TD-E 2SA1419S-TD-H 1.5 2SA1419T-TD-E 2SA1419T-TD-H 2SC3649S-TD-E 2SC3649S-TD-H 2SC3649T-TD-E 2SC3649T-TD-H 0.4 Product & Package Information Package : PCP JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD TD Marking RANK RANK 0.75 Bott...