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C3669 Dataheets PDF



Part Number C3669
Manufacturers Toshiba
Logo Toshiba
Description 2SC3669
Datasheet C3669 DatasheetC3669 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junct.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 80 5 2 1 1000 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.2 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 80 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note 2) VCE = 2 V, IC = 0.5 A hFE (2) VCE (sat) VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A VBE (sat) IC = 1 A, IB = 0.05 A fT VCE = 2 V, IC = 0.5 A Cob VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton 20 μs Input IB1 Output IB1 IB2 30 Ω Switching time Storage time Fall time tstg IB2 VCC = 30 V tf IB1 = 0.05 A,IB2 = 0.05 A duty cycle ≤ 1% Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking 2SC3669 Min Typ. Max Unit ― ― 1.0 μA ― ― 1.0 μA 80 ― ― V 70 ― 240 40 ― ― ― 0.15 0.5 V ― 0.9 1.2 V ― 100 ― MHz ― 30 ― pF ― 0.2 ― ― 1.0 ― μs ― 0.2 ― C3669 Characteristics indicator Part No. (or abbreviation code) Lot No. Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 Collector current IC (A) 2.0 35 25 20 1.6 1.2 IC – VCE 15 10 0.8 IB = 5 mA 0.4 Common emitter Ta = 25°C 0 0 0 .


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