Document
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
80 80 5 2 1 1000 150 −55 to 150
V V V A A mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1) (Note 2)
VCE = 2 V, IC = 0.5 A
hFE (2) VCE (sat)
VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A
VBE (sat) IC = 1 A, IB = 0.05 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 μs
Input IB1
Output
IB1 IB2
30 Ω
Switching time Storage time Fall time
tstg IB2
VCC = 30 V tf IB1 = 0.05 A,IB2 = 0.05 A
duty cycle ≤ 1%
Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SC3669
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
80 ― ―
V
70 ― 240
40 ― ―
― 0.15 0.5
V
― 0.9 1.2
V
― 100 ― MHz
― 30 ― pF
― 0.2 ―
― 1.0 ―
μs
― 0.2 ―
C3669
Characteristics indicator
Part No. (or abbreviation code) Lot No. Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21
Collector current IC (A)
2.0 35 25 20
1.6
1.2
IC – VCE
15
10
0.8 IB = 5 mA
0.4 Common emitter Ta = 25°C 0
0 0 .