C3689

Ordering number : EN1855B 2SC3689 SANYO Semiconductors DATA SHEET 2SC3689 NPN Epitaxial Planar Silicon Transistor High-hFE, Low-Frequency General-Purpose Amplifier Applications Applications Low-frequency general-purpose amplifiers, drivers, muting circuit. Features Small Cob (Cob=1.5pF). Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer. Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 60 50 15 100 200 200 150 --55 to +150 Unit V V V mA mA W °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremel...