Document
Ordering number : ENN1970B
2SC3751
NPN Triple Diffused Planar Silicon Transistor
2SC3751
800V / 1.5A Switching Regulator Applications
Features
• High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting.
Package Dimensions
unit : mm 2041A
10.0 3.2
[2SC3751]
4.5 2.8
3.5 7.2 16.0
18.1 5.6
1.6 1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
0.75 123 2.55 2.55
2.55 2.55
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, Duty Cycle≤10% Tc=25°C
Parameter
Collector Cutoff Current Emitter Cutoff Current
Symbol
ICBO IEBO
Conditions
VCB=800V, IE=0 VEB=5V, IC=0
min
2.4 14.0
2.4 0.7
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-220ML
Ratings 1100 800 7 1.5 5 0.8 25 150
--55 to +150
Unit V V V A A A W °C °C
Ratings typ
max
Unit
10 µA
10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SC3751
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings min typ
DC Current Gain Gain-Bandwidth Product
hFE1 hFE2
fT
VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A
10* 8 15
Output Capacitance
Cob VCB=10V, f=1MHz
35
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
VCE(sat) VBE(sat)
IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A
Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞
1100 800
Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-On Time Storage Time Fall Time
V(BR)EBO VCEX(sus)
ton tstg
tf
IE=1mA, IC=0 IC=0.75A, IB1=--IB2=0.15A, L=5mH, clamped VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω
7 800
* : The hFE1 of the 2SC3751 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
Rank
K
LM
hFE
10 to 20
15 to 30
20 to 40
max 40*
2.0 1.5
0.5 3.0 0.3
Unit
MHz pF V V V V V V µs µs µs
Switching Time Test Circuit
PW=20µs D.C.≤1%
IB1 IB2
OUTPUT
INPUT
VR
50Ω
RB
+ 100µF
RL 400Ω
+ 470µF
VBE= --5V
VCC=400V
IC -- VCE
1.6
1.4
Collector Current, IC -- A
1.2
1.0 120mA 100mA
0.8 80mA 60mA
0.6 40mA
0.4 20mA
10mA 0.2 5mA IB=0
0 0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V ITR05871
VCE(sat) -- IC
10
7 IC / IB=5
5
3 2
1.0 7 5
3 2
0.1 7 5
3 2 0.01
--40°C 25°C
23
5 7 0.1
23
5 7 1.0
2
Collector Current, IC -- A
ITR05873
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Ta=120°C Base-to-Emitter Saturation Voltage, VBE(sat) -- V
DC Current Gain, hFE
hFE -- IC
2
100 7
5 Ta=120°C
VCE=5V
3
2 25°C
10 --40°C
7 5
3 0.01
10 7 5
23
5 7 0.1
23
5 7 1.0
2
Collector Current, IC -- A
ITR05872
VBE(sat) -- IC
IC / IB=5
3 2
1.0 7 5
3 2 0.01
Ta= --40°C 25°C 120°C
2 3 5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC -- A
ITR05874
Collector Current, IC -- A
Switching Time, SW Time -- µs
2SC3751
IC -- VBE
SW Time -- IC
1.6 10
VCE=5V
7
1.4 5 tstg
1.2 3
2
Ta=120°C 25°C --40°C
1.0 1.0
0.8 7
ton
5
0.6 3
0.4 2 tf
0.2
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
Forward Bias A S O
10
7 ICP=5A
5
ITR05875
100µs
1ms 10ms
3
2 IC=1.5A
1.0 7 5
DC operation
3 2
0.1 7 5
3 2
0.01
7 Tc=25°C
5 3
Single pulse
3 5 7 10
2 3 5 7 100
2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V ITR05877
PC -- Tc
32
Collector Current, IC -- A
0.1 7 5 0.1
10 7 5
3 2
23
5 7 1.0
2
Collector Current, IC -- A
Reverse Bias A S O
35 ITR05876
1.0 7 5
3 2
0.1
7 5
IB2= --0.15A Tc=25°C
5 7 100
23
5 7 1000
2
Collector-to-Emitter Voltage, VCE -- V ITR05878
Collector Current, IC -- A
Collector Dissipation, PC -- W
28 25
24
20
16
12
8
4
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR05879
2SC3751
Specifications of any and all SANYO products descr.