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C3751 Dataheets PDF



Part Number C3751
Manufacturers Sanyo
Logo Sanyo
Description 2SC3751
Datasheet C3751 DatasheetC3751 Datasheet (PDF)

Ordering number : ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting. Package Dimensions unit : mm 2041A 10.0 3.2 [2SC3751] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C 0.75 123 2.55 2.55 2.55 2.55 Parameter Collector-.

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Ordering number : ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features • High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting. Package Dimensions unit : mm 2041A 10.0 3.2 [2SC3751] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 Specifications Absolute Maximum Ratings at Ta=25°C 0.75 123 2.55 2.55 2.55 2.55 Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions PW≤300µs, Duty Cycle≤10% Tc=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=800V, IE=0 VEB=5V, IC=0 min 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings 1100 800 7 1.5 5 0.8 25 150 --55 to +150 Unit V V V A A A W °C °C Ratings typ max Unit 10 µA 10 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC3751 Continued from preceding page. Parameter Symbol Conditions Ratings min typ DC Current Gain Gain-Bandwidth Product hFE1 hFE2 fT VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A 10* 8 15 Output Capacitance Cob VCB=10V, f=1MHz 35 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat) VBE(sat) IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ 1100 800 Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-On Time Storage Time Fall Time V(BR)EBO VCEX(sus) ton tstg tf IE=1mA, IC=0 IC=0.75A, IB1=--IB2=0.15A, L=5mH, clamped VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω VCC=400V, 5IB1=--2.5IB2=IC=1A, RL=400Ω 7 800 * : The hFE1 of the 2SC3751 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank K LM hFE 10 to 20 15 to 30 20 to 40 max 40* 2.0 1.5 0.5 3.0 0.3 Unit MHz pF V V V V V V µs µs µs Switching Time Test Circuit PW=20µs D.C.≤1% IB1 IB2 OUTPUT INPUT VR 50Ω RB + 100µF RL 400Ω + 470µF VBE= --5V VCC=400V IC -- VCE 1.6 1.4 Collector Current, IC -- A 1.2 1.0 120mA 100mA 0.8 80mA 60mA 0.6 40mA 0.4 20mA 10mA 0.2 5mA IB=0 0 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE -- V ITR05871 VCE(sat) -- IC 10 7 IC / IB=5 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --40°C 25°C 23 5 7 0.1 23 5 7 1.0 2 Collector Current, IC -- A ITR05873 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=120°C Base-to-Emitter Saturation Voltage, VBE(sat) -- V DC Current Gain, hFE hFE -- IC 2 100 7 5 Ta=120°C VCE=5V 3 2 25°C 10 --40°C 7 5 3 0.01 10 7 5 23 5 7 0.1 23 5 7 1.0 2 Collector Current, IC -- A ITR05872 VBE(sat) -- IC IC / IB=5 3 2 1.0 7 5 3 2 0.01 Ta= --40°C 25°C 120°C 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A ITR05874 Collector Current, IC -- A Switching Time, SW Time -- µs 2SC3751 IC -- VBE SW Time -- IC 1.6 10 VCE=5V 7 1.4 5 tstg 1.2 3 2 Ta=120°C 25°C --40°C 1.0 1.0 0.8 7 ton 5 0.6 3 0.4 2 tf 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE -- V Forward Bias A S O 10 7 ICP=5A 5 ITR05875 100µs 1ms 10ms 3 2 IC=1.5A 1.0 7 5 DC operation 3 2 0.1 7 5 3 2 0.01 7 Tc=25°C 5 3 Single pulse 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector-to-Emitter Voltage, VCE -- V ITR05877 PC -- Tc 32 Collector Current, IC -- A 0.1 7 5 0.1 10 7 5 3 2 23 5 7 1.0 2 Collector Current, IC -- A Reverse Bias A S O 35 ITR05876 1.0 7 5 3 2 0.1 7 5 IB2= --0.15A Tc=25°C 5 7 100 23 5 7 1000 2 Collector-to-Emitter Voltage, VCE -- V ITR05878 Collector Current, IC -- A Collector Dissipation, PC -- W 28 25 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C ITR05879 2SC3751 Specifications of any and all SANYO products descr.


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