C3777

Ordering number:EN1950B NPN Epitaxial Planar Silicon Transistor 2SC3777 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF frequency converters, local oscillators, lownoise amplifiers, wide-band amplifiers. Features · Small noise figure : NF=3.0dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.5GHz typ. Package Dimensions unit:mm 2004A [2SC3777] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance ICBO IEBO hFE fT Cob Cre VCB=16V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5mA VCE=10V, IC=5mA VCB=10V, f=1MHz VCB=10V, f=1MHz * : The 2SC3777 is classified by 5mA hFE as follows : 40 C 80 60 D 120 100 E 200 C : Collector E : Emitter B : Base SANYO : NP Ratings 25 16 3 50 20 400 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ 40* 1.8 3.5 0.7 0.45 max 1.0 10 200* 1.0 Unit µA µA GHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extreme...