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C3955 Dataheets PDF



Part Number C3955
Manufacturers Sanyo
Logo Sanyo
Description 2SC3955
Datasheet C3955 DatasheetC3955 Datasheet (PDF)

Ordering number:EN2439A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1540/2SC3955 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless typ.

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Ordering number:EN2439A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1540/2SC3955 High-Definition CRT Display Video Output Applications Applications · High-definition CRT display video output, wide-band amplifier. Features · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package. ( ) : 2SA1540 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Package Dimensions unit:mm 2042A [2SA1540/2SC3955] Conditions B : Base C : Collector E : Emitter SANYO : TO-126ML Ratings (–)200 (–)200 (–)3 (–)100 (–)200 1.3 7 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)30mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage Emitter-to-Base Saturation Voltage VCE(sat) IC=(–)20mA, IB=(–)2mA VBE(sat) IC=(–)20mA, IB=(–)2mA *hFE1 : The 2SA1540/2SC3955 are classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 Ratings min typ 40* 20 300 1.9 (2.4) 1.5 (1.8) max (–)0.1 (–)1.0 320* (–)1.0 (–)1.0 Unit µA µA MHz pF pF pF pF V V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72098HA (KT)/N228MO/2247TA, TS No.2439-1/4 2SA1540/2SC3955 No.2439-2/4 2SA1540/2SC3955 No.2439-3/4 2SA1540/2SC3955 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information.


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