Document
Ordering number:EN2439A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1540/2SC3955
High-Definition CRT Display Video Output Applications
Applications
· High-definition CRT display video output, wide-band amplifier.
Features
· High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high
frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic package.
( ) : 2SA1540
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Package Dimensions
unit:mm 2042A
[2SA1540/2SC3955]
Conditions
B : Base C : Collector E : Emitter
SANYO : TO-126ML
Ratings (–)200 (–)200 (–)3 (–)100 (–)200 1.3 7 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)30mA VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage Emitter-to-Base Saturation Voltage
VCE(sat) IC=(–)20mA, IB=(–)2mA VBE(sat) IC=(–)20mA, IB=(–)2mA
*hFE1 : The 2SA1540/2SC3955 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
Ratings min typ
40* 20
300 1.9 (2.4) 1.5 (1.8)
max (–)0.1 (–)1.0 320*
(–)1.0 (–)1.0
Unit
µA µA
MHz pF pF pF pF V V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/N228MO/2247TA, TS No.2439-1/4
2SA1540/2SC3955
No.2439-2/4
2SA1540/2SC3955
No.2439-3/4
2SA1540/2SC3955
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