TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4117
Audio Frequency General Purpose Amplifier Applicatio...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC4117
Audio Frequency General Purpose Amplifier Applications
2SC4117
Unit: mm
AEC-Q101 Qualified (Note1) High voltage: VCEO = 120 V Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 200 to 700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
120
V
VCEO
120
V
VEBO
5
V
IC
100
mA
IB
20
mA
PC (Note 2, 4)
200
mW
PC (Note 3)
100
Tj (Note 2)
150
°C
Tj (Note 3)
125
Tstg (Note 2)
55 to 150
°C
Tstg (Note 3)
55 to 125
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability...
