Document
Ordering number:ENN2510A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1592/2SC4134
High-Voltage Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers.
Features
· Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/
2SC4134-applied sets to be made more compact.
Package Dimensions
unit:mm 2045B
[2SA1592/2SC4134]
6.5 5.0 2.3 4 0.5
5.5 1.5 7.0
unit:mm 2044B
0.85 0.7
0.6 12 3
2.3 2.3
0.8 1.6 7.5
1.2
0.5
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
[2SA1592/2SC4134]
6.5 2.3
5.0 0.5 4
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
2.3 2.3
0.5
1.2 0 to 0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/5
2SA1592/2SC4134
( ) : 2SA1592
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC Tc=25˚C
Junction Temperature
Tj
Storage Temperature
Tstg
* : The 2SA1592/2SC4134 are classified by 100mA hFE as follows :
Rank hFE
RST 100 to 200 140 to 280 200 to 400
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breadown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO IEBO hFE
fT
Cob
VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA
VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)400mA, IB=(–)40mA
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)400mA, IB=(–)40mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
ton See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
IB1
INPUT PW=20µs DC≤1%
50Ω
VR
IB2
RB +
OUTPUT
RL +
100µF 470µF
--5V 50V
10IB1= --10IB2=IC=400mA For PNP, the polarity is reversed.
Ratings (–)120 (–)100 (–)6 (–)1 (–)2 0.8 10 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
100* 120 8.5 (13)
(–0.2) 0.1
(–)0.85 (–)120 (–)100
(–)6 (80) 80
(700) 850 (40) 50
max (–)100 (–)100
400*
(–0.6) 0.4
(–)1.2
Unit
nA nA
MHz pF pF V V V V V V ns ns ns ns ns ns
No.2510-2/5
Collector Current, IC – A
Collector Current, IC – A
2SA1592/2SC4134
--1.0
2SA1592
--0.8
--30mA
--0.6
IC -- VCE
--25mA
--20mA
--15m-A-10mA --5mA
1.0
2SC4134 0.8 30m25AmA
IC -- VCE
0.6
--3mA
--0.4
--2mA
0.4
--1mA
--0.2 0.2
20mA 15mA 10mA
5mA 3mA 2mA
1mA
0 0
--500
--400
--300
--200
--100
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR03995
IC -- VCE
--2.5mA
2SA1592
--2.0mA
--1.5mA
--1.0mA
--0.5mA
Collector Current, IC – mA 2.5mA
0 IB=0
0 12 345
Collector-to-Emitter Voltage, VCE – V ITR03996
IC -- VCE
500
2SC4134 2.0mA
400
1.5mA
300
1.0mA
200
0.5mA
100
0 0
--1.2
--1.0
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03997
IC -- VBE
2SA1592 VCE=--5V
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03998
IC -- VBE
1.2
2SC4134
VCE=5V
1.0
Collector Current, IC – mA
Collector Current, IC – A Ta=75°C 25°C --25°C
Collector Current, IC – A
--0.8 0.8
--0.6 0.6
Ta=75°C 25°C --25°C
--0.4 0.4
DC Current Gain, hFE
--0.2
0 0
1000 7 5 3 2
100 7 5 3 2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03999
hFE -- IC
2SA1592 VCE=--5V
Ta=75°C
25°C --25°C
10
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
ITR04001
DC Current Gain, hFE
0.2
0 0
1000 7 5 3 2
100 7 5 3 2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR04000
hFE -- IC
2SC4134 VCE=5V
Ta=75°C
25°C
--25°C
10 7 0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A
ITR04002
No.2510-3/5
Base-to-Emitter Saturation Voltage, VBE(sat) – V
Base-to-.