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C4134 Dataheets PDF



Part Number C4134
Manufacturers Sanyo
Logo Sanyo
Description 2SC4134
Datasheet C4134 DatasheetC4134 Datasheet (PDF)

Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1592/2SC4134] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0..

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Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1592/2SC4134] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SA1592/2SC4134] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/5 2SA1592/2SC4134 ( ) : 2SA1592 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Tc=25˚C Junction Temperature Tj Storage Temperature Tstg * : The 2SA1592/2SC4134 are classified by 100mA hFE as follows : Rank hFE RST 100 to 200 140 to 280 200 to 400 Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breadown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions ICBO IEBO hFE fT Cob VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA VCB=(–)10V, f=1MHz VCE(sat) IC=(–)400mA, IB=(–)40mA VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)400mA, IB=(–)40mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 ton See specified Test Circuit tstg See specified Test Circuit tf See specified Test Circuit Switching Time Test Circuit IB1 INPUT PW=20µs DC≤1% 50Ω VR IB2 RB + OUTPUT RL + 100µF 470µF --5V 50V 10IB1= --10IB2=IC=400mA For PNP, the polarity is reversed. Ratings (–)120 (–)100 (–)6 (–)1 (–)2 0.8 10 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 100* 120 8.5 (13) (–0.2) 0.1 (–)0.85 (–)120 (–)100 (–)6 (80) 80 (700) 850 (40) 50 max (–)100 (–)100 400* (–0.6) 0.4 (–)1.2 Unit nA nA MHz pF pF V V V V V V ns ns ns ns ns ns No.2510-2/5 Collector Current, IC – A Collector Current, IC – A 2SA1592/2SC4134 --1.0 2SA1592 --0.8 --30mA --0.6 IC -- VCE --25mA --20mA --15m-A-10mA --5mA 1.0 2SC4134 0.8 30m25AmA IC -- VCE 0.6 --3mA --0.4 --2mA 0.4 --1mA --0.2 0.2 20mA 15mA 10mA 5mA 3mA 2mA 1mA 0 0 --500 --400 --300 --200 --100 IB=0 --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE – V ITR03995 IC -- VCE --2.5mA 2SA1592 --2.0mA --1.5mA --1.0mA --0.5mA Collector Current, IC – mA 2.5mA 0 IB=0 0 12 345 Collector-to-Emitter Voltage, VCE – V ITR03996 IC -- VCE 500 2SC4134 2.0mA 400 1.5mA 300 1.0mA 200 0.5mA 100 0 0 --1.2 --1.0 IB=0 --10 --20 --30 --40 --50 Collector-to-Emitter Voltage, VCE – V ITR03997 IC -- VBE 2SA1592 VCE=--5V 0 IB=0 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE – V ITR03998 IC -- VBE 1.2 2SC4134 VCE=5V 1.0 Collector Current, IC – mA Collector Current, IC – A Ta=75°C 25°C --25°C Collector Current, IC – A --0.8 0.8 --0.6 0.6 Ta=75°C 25°C --25°C --0.4 0.4 DC Current Gain, hFE --0.2 0 0 1000 7 5 3 2 100 7 5 3 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE – V ITR03999 hFE -- IC 2SA1592 VCE=--5V Ta=75°C 25°C --25°C 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A ITR04001 DC Current Gain, hFE 0.2 0 0 1000 7 5 3 2 100 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE – V ITR04000 hFE -- IC 2SC4134 VCE=5V Ta=75°C 25°C --25°C 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A ITR04002 No.2510-3/5 Base-to-Emitter Saturation Voltage, VBE(sat) – V Base-to-.


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