DatasheetsPDF.com

2SC4135. C4135 Datasheet

DatasheetsPDF.com

2SC4135. C4135 Datasheet






C4135 2SC4135. Datasheet pdf. Equivalent




C4135 2SC4135. Datasheet pdf. Equivalent





Part

C4135

Description

2SC4135



Feature


Ordering number:ENN2511A PNP/NPN Epitax ial Planar Silicon Transistors 2SA1593/ 2SC4135 High-Voltage Switching Applicat ions Applications · Power supplies, r elay derivers, lamp drivers. Features Adoption of FBET, MBIT processes. · High breakdown voltage and large curren t capacity. · Fast switching speed. · Small and slim package permitting 2SA1 593/ 2SC4135-applied se.
Manufacture

Sanyo

Datasheet
Download C4135 Datasheet


Sanyo C4135

C4135; ts to be made more compact. Package Dim ensions unit:mm 2045B [2SA1593/2SC4135] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:m m 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collecto r 3 : Emitter 4 : Collector SANYO : TP [2SA1593/2SC4135] 6.5 2.3 5.0 0.5 4 0 .8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0 to 0.2 1 : Base 2 : Collector 3 : .


Sanyo C4135

Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or co ntained herein do not have specificatio ns that can handle applications that re quire extremely high levels of reliabil ity, such as life-support systems, airc raft’s control systems, or other appl ications whose failure can be reasonabl y expected to result in serious physica l and/or material da.


Sanyo C4135

mage. Consult with your SANYO representa tive nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at valu es that exceed, even momentarily, rated values (such as maximum ratings, opera ting condition ranges,or other paramete rs) listed in prod.

Part

C4135

Description

2SC4135



Feature


Ordering number:ENN2511A PNP/NPN Epitax ial Planar Silicon Transistors 2SA1593/ 2SC4135 High-Voltage Switching Applicat ions Applications · Power supplies, r elay derivers, lamp drivers. Features Adoption of FBET, MBIT processes. · High breakdown voltage and large curren t capacity. · Fast switching speed. · Small and slim package permitting 2SA1 593/ 2SC4135-applied se.
Manufacture

Sanyo

Datasheet
Download C4135 Datasheet




 C4135
Ordering number:ENN2511A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1593/2SC4135
High-Voltage Switching Applications
Applications
· Power supplies, relay derivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1593/
2SC4135-applied sets to be made more compact.
Package Dimensions
unit:mm
2045B
[2SA1593/2SC4135]
6.5
5.0 2.3
4 0.5
unit:mm
2044B
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SA1593/2SC4135]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/8219MO/4097TA, TS No.2511-1/5




 C4135
2SA1593/2SC4135
( ) : 2SA1593
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
Junction Temperature
PC Tc=25˚C
Tj
Storage Temperature
Tstg
* : The 2SA1593/2SC4135 are classified by 100mA hFE as follows :
Rank
hFE
RST
100 to 200 140 to 280 200 to 400
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=()100V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()100mA
VCE=()10V, IC=()100mA
VCB=()10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
VCE(sat) IC=()1A, IB=()100mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()1A, IB=()100mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
Switching Time Test Circuit
INPUT
PW=20µs
DC1%
50
VR
IB1
IB2
RB
+
OUTPUT
RL
+
100µF 470µF
--5V 50V
10IB1= --10IB2= IC=0.7A
For PNP, the polarity is reversed.
Ratings
()120
()100
()6
()2
()3
1
15
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
()100
()100
100*
400*
120
(25)
16
(0.22) (0.6)
0.13
0.4
()0.85 ()1.2
()120
()100
()6
(80)
80
(750)
1000
(40)
50
Unit
nA
nA
MHz
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
No.2511-2/5




 C4135
--2.0
2SA1593
--1.6
--50mA
--1.2
2SA1593/2SC4135
IC -- VCE
--40mA
--30-m-2A0mA
2.0
2SC4135
1.6
--10mA
1.2
IC -- VCE
504m0AmA
30mA
20mA
10mA
--0.8
--5mA
0.8
5mA 3mA
--3mA
--0.4
--2mA
0.4
2mA
--1mA
1mA
0
0
--1.0
--0.8
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR04011
IC -- VCE
--6mA--5mA
2SA1593
--4mA
--0.6 --3mA
0 IB=0
0 12 345
Collector-to-Emitter Voltage, VCE – V ITR04012
IC -- VCE
1.0
4.5mA4.0mA
2SC4135
0.8 3.5mA
3.0mA
0.6 2.5mA
--0.4 --2mA
2.0mA
0.4
1.5mA
--0.2
0
0
--2.4
--2.0
--1mA
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR04013
IC -- VBE
2SA1593
VCE=--5V
1.0mA
0.2
0.5mA
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR04014
IC -- VBE
2.4
2SC4135
VCE=5V
2.0
--1.6
1.6
--1.2
1.2
--0.8
0.8
--0.4
0
0
1000
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V ITR04015
hFE -- IC
2SA1593
VCE=--5V
Ta=75°C
25°C
--25°C
100
7
5
3
7 --0.01 2 3
5 7 --0.1
23
5 7 --1.0
23
Collector Current, IC – A
fI
ITR04017
0.4
0
0
1000
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR04016
hFE -- IC
2SC4135
VCE=5V
3
Ta=75°C
2
--25°C
25°C
100
7
5
3
7 0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A
Cb V
ITR04018
No.2511-3/5



Recommended third-party C4135 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)