C4210

2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications High DC current gain: hFE = 100~320 Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 35 30 5 800 160 200 150 −55~150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = ...