TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4320
2SC4320
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC4320
2SC4320
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 15dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IB IC PC Tj Tstg
Rating
20 10 1.5 20 40 150 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1 GHz VCE = 8 V, IC = 20 mA, f = 2 GHz VCE = 8 V, IC = 5 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 ¾ GHz 12 15 ¾
dB ¾9¾ ¾ 1.1 2.5
dB ¾ 1.7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 50 ¾ ¾
¾ ¾ ¾ 0.75 0.45
1 1 250 ¾ 0.9
mA mA
pF pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
Marking
2SC4320
2 2003-03-19
2SC4320
3 20...