C4324

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 2SC4324 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 1.5 7 15 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz Min Typ. Max Unit 7 10 ¾ GHz ¾ 15 ¾ dB 6.5 9.5 ¾ ¾ 1.4 ¾ dB ¾ 1.8 3.0 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 6 V, IC = 7 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 50 ¾ ¾ ¾ ¾ ¾ 0.55 0.35 1 1 250 ¾ 0.8 mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 Marking 2SC4324 2 2003-03-19 2SC4324 3 2...