Ordering number:EN3790
PNP Epitaxial Planar Silicon Transistor
2SC4411
Ultrahigh-Definition CRT Display Video Output Ap...
Ordering number:EN3790
PNP Epitaxial Planar Silicon
Transistor
2SC4411
Ultrahigh-Definition CRT Display Video Output Applications
Applications
· Wide-band amplifiers.
Features
· High fT (fT=1.2GHz typ). · High breakdown voltage (VCBO=100V, VCEO=80V). · Large current (IC=500mA). · Small reverse transfer capacitance (Cre=3.8pF/
VCB=30V). · Adoption of FBET process.
Package Dimensions
unit:mm
2010C
[2SC4411]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
1.2
18.0 5.6
2.7 14.0
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.55
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob Cre
VCB=80V, IE=0 VEB=2V, IC=0 VCE=10V, IC=50mA VCE=10V, IC=500mA VCE=10V, IC=100mA VCB=30V, f=1MHz VCB=30V, f=1MHz
2.55
1 : Base
0.4
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
Ratings 100 80 3 500 1.0 1.75 15 150
–55 to +150
Unit V V V mA A W W ˚C ˚C
Ratings min typ
30 20
1.2 4.4 3.8
max 0.1 5.0 200
Unit µA µA
GHz pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications...
