Ordering number:EN3019
NPN Triple Diffused Planar Silicon Transistor
2SC4412
TV Camera Deflection, High-Voltage Driver ...
Ordering number:EN3019
NPN Triple Diffused Planar Silicon
Transistor
2SC4412
TV Camera Deflection, High-Voltage Driver Applications
Features
· High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high
frequency characteristic (Cre : 1.0pF typ).
· Excellent DC current gain ratio (hFE ratio : 0.95 typ). · Adoption of FBET process.
Package Dimensions
unit:mm 2018B
[2SC4412]
0.4 3
0.16 0~0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=200V, IE=0 VEB=4V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=30V, IC=10mA
* : The 2SC4412 is classified by 0.1mA hFE as follows : 100 4 200 160 5 (Note) Marking : QT
hFE rank : 4, 5
320
0.8 1.1
1 : Base 2 : Collector 3 : Emitter SANYO : CP
Ratings 300 300 5 50 100 250 150
–55 to +150
Unit V V V mA mA
mW ˚C ˚C
Ratings min typ
100* 100
70
max 0.1 0.1
320*
Unit µA µA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reli...
