C4476

Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications · High voltage amplifier. · High voltage switching. · Dynamic focus. Features · High breakdown voltage (VCEO min=1800V). · Small Cob (Cob typ=1.8pF). · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4476] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 1.2 18.0 5.6 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance Symbol Conditions ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob VCB=1800V, IE=0 VEB=4V, IC=0 VCE=5V, IC=300µA VCE=10V, IC=300µA IC=600µA, IB=120µA IC=600µA, IB=120µA IC=100µA, IE=0 IC=100µA, RBE=∞ IE=10µA, IC=0 VCB=100V, f=1MHz 2.55 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Ratings 2000 1800 5 10 30 1.7...