C4490

Ordering number:EN3097 Features · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2064 [2SA1710/2SC4490] ( ) : 2SA1710 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance ICBO IEBO hFE fT VCE(sat) VBE(sat) Cob VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA VCB=(–)30V, f=1MHz E : Emitter C : Collector B : Base SANYO : NMP Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 70* 70 (3.1) 2.6 max (–)100 (–)100 280* (–)0.6 (–)1.0 Unit nA nA MHz V V pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft...