2SC4539

SMD Type NPN Transistors 2SC4539 Transistors ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1743 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Collector - Base Voltage VCBO Collector - Emitter Voltage VCEO Emitter - Base Voltage VEBO Collector Current - Continuous IC Base Current IB Collector Power Dissipation (Note.1) PC Junction Temperature TJ Storage Temperature Range Tstg Note.1: Mounted on ceramic substrate (250 mm2 × 0.8 t) ■ Electrical Characteristics Ta = 25℃ Rating 50 30 6 1.2 0.3 500 1000 150 -55 to 150 Unit V A mW ℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Turn-on time Storage tome Fall time Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 uA， IE= 0 VCEO Ic= 10 mA，IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 50V , IE= 0 IEBO VEB= 6V , IC=0 VCE(sat) IC=700mA, IB=35mA VBE(sat) IC=700mA, IB=35mA VCE= 2V, IC= 100mA hFE VCE= 2V, IC= 1A ton tstg See specified Test Circuit tr Cob VCB= 10V, IE=0,f=1MHz fT VCE= 2V, IC=100mA ■ Marking Marking KB 1.Base 2.Collector 3.Emitter Min Typ Max Unit 50 30 V 6 0.1 uA 0.1 0.5 V 1.2 120 400 40 0.1 0.3 us 0...