2SC4544

Epitaxial Planar NPN Transistor FEATURES z High Voltage. z Small Collector Output Capacitance. z Collector Metal is Fully Covered With Mold Resin. Pb Lead-free Production specification 2SC4544 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 300 V 7V 100 mA 50 mA 2 W 8 -55 to +150 ℃ X034 Rev.A www.gmicroelec.com 1 Production specification Epitaxial Planar NPN Transistor 2SC4544 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN TYP MAX UNIT Collector Cut-off Current ICBO VCB=240V,IE=0 1 μA Emitter Cut-off Current IEBO DC Current Gain hFE Collector-emitter Saturation Voltage VCE(sat) VEB=7V,IC=0 VCE=10V,IC=4mA VCE=10V,IC=20mA IC=10mA, IB=1mA 20 30 1 μA 200 1.0 V Base-emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 1.0 V Transition Frequency Collector Output Capacitance fT VCE=10V, IC=20mA 50 70 Cob VCB=20V,IE=0, f=1MHz 3 MHz pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified X034 Rev.A www.gmicroelec.com 2 Epitaxial Planar NPN Transistor Production specification 2SC4544 X034 Rev.A www.gmicroelec.com 3 Epitaxial Planar NPN Transistor Production specification 2SC45...