Ordering number:ENN3188
Features
· High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.
PNP ...
Ordering number:ENN3188
Features
· High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.
PNP Epitaxial Planar Silicon
Transistor NPN Triple Diffuesd Planar Silicon
Transistor
2SA1740/2SC4548
High-Voltage Driver Applications
Package Dimensions
unit:mm 2038A
[2SA1740/2SC4548]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
3 1.5 2 3.0
1
0.75
( ) : 2SA1740
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2×0.8mm)
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings (–)400 (–)400 (–)5 (–)200 (–)400 1.3 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)300V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)50mA
* The 2SA1740/2SC4548 are classified by 50mA hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
60* 200*
Continued on next page.
Marking 2SA1740 : AK 2SC4548 : CN
hFE rank : D, E
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such a...
