2SC4555

NPN Silicon Epitaxial Planar Transistor FEATURES z Complements the 2SA1745. Pb Lead-free Production specification 2SC4555 APPLICATIONS z Ideal for low-voltage operation. ORDERING INFORMATION Type No. Marking 2SC4555 UT SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 20 15 5 500 150 -55 to +150 Units V V V mA mW ℃ F094 Rev.A www.gmicroelec.com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4555 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=15V,IE=0 0.1 μA Emitter cut-off current DC current gain IEBO hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) VEB=4V,IC=0 VCE=2V,IC=10 mA VCE=2V,IC=400mA IC=5mA, IB=0.5mA IC=200mA, IB=10mA IC=-200mA, IB=-10mA 0.1 135 600 80 15 30 160 300 0.95 1.2 μA V V Transition frequency fT VCE=2V, IC=50mA 300 MHz Collector output capacitance Cob VCB=10V,f=1MHz 4.0 pF CLASSIFICATION OF hFE(1) Range 135-270 200-400 300-600 ...