Ordering number:EN3700A
NPN Triple Diffused Planar Silicon Transistor
2SC4631
900V/300mA High-Voltage Amplifier, High-V...
Ordering number:EN3700A
NPN Triple Diffused Planar Silicon
Transistor
2SC4631
900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=900V). · Small Cob (typical Cob=5.0pF). · Full-isolation package. · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2079B
[2SC4631]
10.0 3.2
4.5 2.8
3.5 7.2
16.0
0.6
16.1 3.6
0.9 1.2 0.7
14.0
0.75 1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.55
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO IEBO hFE
fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
VCB=900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=30mA VCE=10V, IC=30mA IC=60mA, IB=12mA IC=60mA, IB=12mA IC=1mA, IE=0 IC=1mA, RBE=∞ IE=1mA, IC=0
2.55
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI (LS)
Ratings 1500 900 5 300 1 2 150
–55 to +150
Unit V V V mA A W ˚C ˚C
Ratings min typ
30 6
1500 900 5
max 10 10
5 2
Unit
µA µA
MHz V V V V V
An...