C4644

Ordering number:EN3520 Features · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob Cre VCE(sat) VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz IC=(–)50mA, IB=(–)5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)50mA, IB=(–)5mA E : Emitter C : Collector B : Base SANYO : NMP Ratings (–)400 (–)400 (–)5 (–)200 (–)400 1 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 60* 70 (5)4 (4)3 max (–)0.1 (–)0.1 200* (–0.8) 0.6 (–)1.0 Unit µA µA MHz pF pF V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely ...